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Conferences > CLEO > 1993 > CTuD > CTuD5
  • Conference on Lasers and Electro-Optics
  • OSA Technical Digest (Optica Publishing Group, 1993),
  • paper CTuD5

InGaAs/GaAs quantum well lasers using the technology of bonding by atomic rearrangement

Y. H. Lo, R. Bhat, D. M. Hwang, C. Chua, and C.-H. Lin

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Abstract

The realization of Si-based optoelectronic integrated circuits (OEJC) will considerably increase the density of optical interconnect and thereby the data throughput and the capabilities for parallel processing. The most challenging task for OEJCs on Si is to achieve tollable light sources such as lasers on Si. Using a novel technology, namely bonding by atomic rearrangement (BAR), we demonstrated high performance InGaAs/GaAs MQW lasers on Si substrates.

© 1993 Optical Society of America

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