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Optica Publishing Group
  • Conference on Lasers and Electro-Optics
  • OSA Technical Digest (Optica Publishing Group, 1993),
  • paper CThQ4

Facet heating effects in red-emitting GaInP quantum well lasers

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Abstract

Heating in laser diodes is important because of its impact on the maximum optical output power P and on reliability. We demonstrate by local mirror temperature measurements matte by Raman spectroscopy and reflectance modulation Ar+ laser microprobe techniques1 that our strained quantum-well (Al)GaInP ridge lasers with AlGaAs cladding layers2 lead to substantial reduction in overall heating and in particular also to the critical facet heating. We show in detail that the temperatures depend sensitively on the type of cladding layer, mounting, heat spreader and number of active quantum wells (QW) used in the various laser devices.

© 1993 Optical Society of America

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