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  • Conference on Lasers and Electro-Optics
  • OSA Technical Digest (Optica Publishing Group, 1993),
  • paper CThM7

Studies of two-photon transition nonlinearities near half the band gap in semiconductors based on AlGaAs for nonlinear switching

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Abstract

Because of their strong and fast response, the nonlinearities induced by two-photon transitions in semiconductors have been considered for ultrafast all-optical switching.1-3 The switching is efficient, particularly for wavelengths near half the band gap where the nonlinear refractive index, n2, is enhanced by the onset of two-photon absorption. Below the band gap, an important figure of merit related to two-photon absorption is defined by T = 2 β2λ to /n2.4 Here, β2 is the two-photon absorption coefficient and λ is the wavelength in vacuum. T < 1 is the criterion for efficient nonlinear switching. Hence, knowledge of β2 and η2 is important.

© 1993 Optical Society of America

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