Top-collector light-emitting charge injection transistors and logic elements in n-InGaAs/ InAlAs/p-InGaAs and n-InGaAs/lnP/p-InGaAs heterostructures

G. L. Belenky; S. Luryi; M. Mastrapasqua; P. A. Garbinski; A. Y. Cho; R. A. Hamm; T. R. Hayes; E. J. Laskowski; D. L. Sivco

Conference on Lasers and Electro-Optics
OSA Technical Digest (Optica Publishing Group, 1993),
paper CThA4

Top-collector light-emitting charge injection transistors and logic elements in n-InGaAs/ InAlAs/p-InGaAs and n-InGaAs/lnP/p-InGaAs heterostructures

G. L. Belenky, S. Luryi, M. Mastrapasqua, P. A. Garbinski, A. Y. Cho, R. A. Hamm, T. R. Hayes, E. J. Laskowski, and D. L. Sivco

Conference on Lasers and Electro-Optics 1993

Baltimore, Maryland United States
2–7 May 1993
ISBN: 1-55752-189-1

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G. L. Belenky, S. Luryi, M. Mastrapasqua, P. A. Garbinski, A. Y. Cho, R. A. Hamm, T. R. Hayes, E. J. Laskowski, and D. L. Sivco, "Top-collector light-emitting charge injection transistors and logic elements in n-InGaAs/ InAlAs/p-InGaAs and n-InGaAs/lnP/p-InGaAs heterostructures," in Conference on Lasers and Electro-Optics, A. Glass, T. Hsu, T. Deutsch, and J. Goldman, eds., Vol. 10 of OSA Technical Digest (Optica Publishing Group, 1993), paper CThA4.

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Abstract

Light-emitting charge injection transistors (CHINT), employing the real space transport injection of emitter carriers in a complementary collector layer were proposed recently.¹ The direction of output (collector) current is the same irrespective of the polarity of the input (heating) voltage. This symmetry implies that output current and emitting light in a complementary CHINT are an exclusive OR function of the voltages applied on the emitter contacts. Optoelectronic logic elements on the basis of light emitting CHINT implemented in down collector configuration were demonstrated.²

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