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Conferences > CLEO > 1993 > CPD > CPD22
  • Conference on Lasers and Electro-Optics
  • OSA Technical Digest (Optica Publishing Group, 1993),
  • paper CPD22

The Monolithic Optoelectronic Transistor

B. F. Aull, K. B. Nichols, P. A. Maki, S. C. Palmateer, E. R. Brown, and T. A. Lind

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Abstract

We report a new smart-pixel device, the monolithic optoelectronic transistor (MOET). It uses GaAs/AIGaAs multiple-quantum-well p-i-n diodes as both photodetectors for optical input and reflection modulators for optical output The switching action is obtained by using a double-barrier resonant-tunneling diode (RTD). The RTD is connected in series with the input detector and produces an abrupt voltage change at a threshold level of photocurrent This voltage change is amplified by a FET to drive the output modulator.

© 1993 Optical Society of America

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