Abstract

Submilliampere laser threshold and very high speed modulation characteristics are required for semiconductor lasers to be useful in computer interconnects. So far, ultralow laser threshold (as low as 1 mA without coatings) and high speed operation has been obtained only from (In)GaAs-AlGaAs buried heterostructure (BH) quantum well (QW) lasers¹. However, these devices have shown poor reproducibility and poor yield due to processing steps involved such as the regrowth of AlGaAs layers on the surface where AlGaAs is once exposed to the air. Recently, InGaAs-GaAs-InGaP lasers have received a great deal of attention. One of the most important features of Al-free InGaP includes a much easier fabrication of BH lasers by epitaxial regrowth technique owing to lower surface oxidation as reported in Ref.[2] using InGaP BH strained QW lasers with excellent reproducibility and very high yield.

© 1993 Optical Society of America