Abstract
Long wavelength optoelectronic integrated circuits (OEICs) are now a well-established field of research in several laboratories, motivated by the progress oí optical communications towards higher hit rate and multi-channel systems. Monolithic integration of photonic devices with electronic integrated circuits offers potential benefits of superior performance, greater functionality, greater reliability, and probably, in the long ran, lower cost. The photoreceiver, in which a photodetector is monolithically integrated with a preamplifier circuit, has been the most widely' investigated. Among the variety of electronic devices available for integration, the heterojunction bipolar transistor1 (HBT) has tremendous potential for high speed circuits with modest device dimensions. Excellent performance by the HBTs in the InP/InGaAs material system has been demonstrated, The wide band gap emitter and high doping in tire base have resulted in high injection efficiencies and low base resistance. They offer higher transconductance and drive capability than field effect transistors (EETs) The bipolar transistors are also well suited for both analog and digital applications. These features have made them very attractive for OEICs.
© 1993 Optical Society of America
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