Abstract

Operating optoelectronic devices at 1.3 μm on GaAs is desirable due to the dispersion minimum of silica fibers and the advantages of a GaAs substrate versus InP. We previously reported the first observation of excitons and the quantum-confined Stark effect near 1.3 μm on GaAs substrates.¹ The key to this achievement was the incorporation of a linearly graded buffer beneath the active layer multiquantum wells (MQW). This permitted the high quality growth of high In content InGaAs MQW, which operated as a transmission electroabsorption modulator. To obtain higher performance modulators in this work, we used two techniques to produce reflection electroabsorption modulators operating near 1.3 μm: antireflection (AR) coating arid incorporation of mirrors into the graded buffer. Samples were grown by molecular beam epitaxy (MBE) at 450°C.

© 1993 Optical Society of America