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Conferences > CLEO > 1992 > CWG > CWG48
  • Conference on Lasers and Electro-Optics
  • OSA Technical Digest (Optica Publishing Group, 1992),
  • paper CWG48

Substrate misorientation effects in 660-nm bulk GaInP active layer lasers grown by gas-source molecular beam epitaxy.

Akihiko Kikuchi and Katsumi Kishino

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Abstract

Substrate misorientation effects were given attention as a technique to shorten the lasing wavelength in MOCVD-grown AlGaInP lasers.1-3 Recently, using this effect the threshold current density (Jth) of 629-nm MQW lasers was reduced to 2.0 kA/cm2, where the lasers were fabricated by gas-source molecular beam epitaxy (GS-MBE) on 15° misoriented (100) GaAs substrates.4

© 1992 Optical Society of America

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