Abstract
Recently, broad-area (600 × 1000 μm2) amplifiers have demonstrated up to 12-W peak power diffraction-limited emission when injected with a 0.5-W tunable Ti:sapphire master laser,1 From a practical point of view, semiconductor amplifier systems should be based on a low power single-mode diode laser to minimize size and maximize efficiency. In this paper we show >3.2 W of diffraction-limited emission from a double-pass amplifier injected with a diode laser emitting 60 mW.
© 1992 Optical Society of America
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