Abstract
We recently reported the observation of strong room temperature excitons in GaAs/AlxGa1−xAs MQWs for x as low as 0.02.τ This observation was technologically important since the ionization of the exciton under moderate fields (several volts/μm) results in strong electroabsorption.1 Also, fast carrier sweep-out2 results in superior high intensity operation.3
© 1992 Optical Society of America
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