Abstract
Optical transmission modulators based on epitaxial (In, Ga, Al) As multilayers grown on GaAs and operating in the 0.9–1.1-μm wavelength range have several attractive features, in particular the transparency of the substrate and the possibility of use at the 1.06-μm wavelength of Nd:YAG solid-state lasers. Transmission modulators in this wavelength range have previously been demonstrated using InGaAs/AIGaAs strained layer superlattices (SLSs).1 However, structures studied previously have had the disadvantage of requiring relatively high operating voltages to achieve moderate modulation levels.
© 1992 Optical Society of America
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