Abstract

Semiconductor lasers emitting in the 0.98-µm wavelength regime are promising for pumping optical fiber amplifiers and solid-state lasers. Typical high power 0.98-µm pump lasers have AGaAs optical cladding layers, whose high oxidation rate often causes reliability problems and difficulty for regrowth. This makes it difficult to fabricate reliable and cost-effective buried-heterostructure lasers, distributed feedback lasers, and lasers integrated with other electronic or pho-tonic components. In this paper, we report a laser heterostructure design using stepped InGaAsP as the confinement layers and InGaP as optical claddings in place of the typical GaAs/ AlGaAs design to circumvent the disadvantages of AlGaAs.

© 1992 Optical Society of America