Abstract
We have reported a passively mode-locked Nd:YAG laser using semi-insulating GaAs.1 Ultrashort light pulses <10-ps duration were obtained directly with the linear cavity. In this paper, we deduce a unified equation to describe the self-diffraction, and show the sharpening of the trailing edge of pulses caused by induced self-diffraction of colliding pulses in GaAs. Pulse compression owing to saturable single-photon absorption and induced self-diffraction is obtained experimently.
© 1992 Optical Society of America
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