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Conferences > CLEO > 1992 > CTuF > CTuF3
  • Conference on Lasers and Electro-Optics
  • OSA Technical Digest (Optica Publishing Group, 1992),
  • paper CTuF3

High internal efficiency operation of InGaAs/InGaAsP strained-layer MQW lasers

K. Wakao, K. Tanaka, H. Nobuhara, T. Fujii, H. Soda, and T. Tanahashi

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Abstract

High efficiency, high power operation is expected for InGaAs/InGaAsP strained-layer multiple quantum well (MQW) lasers. One must examine the cause to prescribe the internal quantum efficiency for high performance characteristics. This paper reports details of the internal quantum efficiency of strained-layer MQW lasers, it is confirmed that In0.7Ga0.3As/InGaAsP strained-layer MQW lasers have high internal efficiency of 91% and that the absorption loss in the confinement layer is a cause of internal efficiency reduction.

© 1992 Optical Society of America

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