Abstract
Although by now there have been numerous experimental efforts at measuring the performance of long wavelength lasers that incorporate strain in a QW active region,1,2 a completely consistent measure of these strain benefits has not been performed vis-á-vis unstrained devices. Since the details of the various loss mechanisms (Auger currents and intervalence band absorption, for example) are a function of wavelength and QW thickness, it is not possible to make a comparison that keeps both of these variables constant if the QWs are made of the ternary InGaAs while exploring strain over a meaningful range.
© 1992 Optical Society of America
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