Abstract
Strained-layer multiple quantum well (SL-MQW) lasers with excellent performance characteristics such as low threshold currents and high output powers and quantum efficiencies have been demonstrated1,2 for the 1.5-μm wavelength range. These lasers employ a stack of several very thin (30-50 Å) InGaAs quantum wells with large compressive stain ranging from 0.65 to 1.7% surrounded by thicker (80-200 Å) barriers of lattice matched InGaAsP.
© 1992 Optical Society of America
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