Abstract
The measurement of QW widths in typical semiconductor laser structures is usually a difficult task. There are several techniques available that allow the measurement of QW thicknesses in epitaxial samples; two of the most common are photoluminescence (PL) and transmission electron microscopy (TEM). TEM offers the ability to measure layer thickness on samples that are actually used to fabricate stripe lasers. The disadvantages of TEM are laborious sample preparation and prohibitive equipment costs. Photoluminescence is typically used to extract the well width of undoped QW samples. However, the PL method does not allow the evaluation of samples doped to the levels required to fabricate injection-pumped semiconductor lasers.
© 1992 Optical Society of America
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