High-power pinpoint AlGaAs LED fabricated by a simple wafer process

K Hayamizu; H. Watanabe; S. Ogata; H. Imamoto; K. Imanaka

Conference on Lasers and Electro-Optics
OSA Technical Digest (Optica Publishing Group, 1992),
paper CThI33

High-power pinpoint AlGaAs LED fabricated by a simple wafer process

K Hayamizu, H. Watanabe, S. Ogata, H. Imamoto, and K. Imanaka

Conference on Lasers and Electro-Optics 1992

Anaheim, California United States
10–15 May 1992
ISBN: 1-55752-537-5

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Thursday CLEO Poster Session (CThI)

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K. Hayamizu, H. Watanabe, S. Ogata, H. Imamoto, and K. Imanaka, "High-power pinpoint AlGaAs LED fabricated by a simple wafer process," in Conference on Lasers and Electro-Optics, A. Johnson, R. Lind, T. Baer, and A. Smirl, eds., Vol. 12 of OSA Technical Digest (Optica Publishing Group, 1992), paper CThI33.

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Abstract

Nowadays, laser diodes (LDs) are widely used in our information society. However, in the majority of cases, LDs are not used as the coherent light source but as the high-power emitter. As a high-power light source, LDs have the following problems: (1) coherency; this causes optical interference noises in the systems, (2) production liability (PL); laser beam is dangerous to human eyes.

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