Abstract

The development on SL-QW lasers as pumping sources for Er³⁺-doped fiber amplifiers has recently progressed rapidly. Using InGaP instead of AlGaAs for cladding layers[1-4], no degradation due to oxidation of aluminum during fabrication process and laser operation is expected. However, some problems are present in InGaAs/GaAs/InGaP system. The large spikes at GaAs/InGaP hetero-interfaces make the forward voltage of InGaAs/GaAs/InGaP lasers larger than that of InGaAs/GaAs/AlGaAs ones. To eliminate the spikes, three layers of InGaAsP into GaAs/InGaP lattice matched to GaAs were inserted to the hetero-interfaces, resulting in improving carrier injection efficiency.

© 1992 Optical Society of America