Abstract

Remarkable success has been achieved last year in realizing blue-green injection laser diodes by Haase et al.¹⁾ and Jeon et al.,²⁾ using ZnSe-based quantum well structures on GaAs substrates. In both cases, GaAs epitaxial buffer layers were employed to eliminate the problems associated with epilayer/substrate interfaces, which requires multi-chamber MBE systems for the fabrication. It is interesting to examine whether the GaAs buffer layer is necessary for achieving the lasing action. In this paper we demonstrate low-threshold lasing of ZnSe-based single quantum well structures without GaAs buffer layers.

© 1992 Optical Society of America