Abstract
High-power AlGaInP visible light emitting laser diodes with low threshold current operation have attractive potential uses for future optical recording systems and laser printers. The optical output grower is limited due to catastrophic optical damage (COD) at the mirror facets. Very recently, the COD level of visible laser diodes was increased by making use of a strained 150-Å thin Ga0.35In0.62P active layer.1 A threshold current of 65 mA and a maximum light output power of 106 mW was obtained for a 5 × 600 µm transverse-mode stabilised laser diode with antireflection and high-reflection coatings. The lasing wavelength was 690 nm.
© 1992 Optical Society of America
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