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Optica Publishing Group
  • Conference on Lasers and Electro-Optics
  • OSA Technical Digest (Optica Publishing Group, 1992),
  • paper CMA3

Visible laser diode with a multi quantum barrier and a strained GaInP active layer for high power operation

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Abstract

AlGaInP/GaInP high power visible laser diodes are eagerly sought as a writing light source of high density optical disk memory. To achieve high power operation, optical power density at the mirror facets must be reduced. Employment of a thin active layer is an elementary approach; however, the thinning of the active layer usually causes an increase of threshold current due to flooding of electrons over potential barrier located at the interface of p-AlGaInP cladding layer and GaInP active layer. The overflow can be prevented if the barrier height is increased. To enhance the potential barrier height effectively, a multiquantum barrier (MQB) was proposed by Iga et al.1 and was applied to a laser diode with a relatively thick active layer.2 It was also reported that the introduction of large compressive strain (+1%) to the GaInP active layer is effective in enlarging the band-gap difference between the active and cladding layers.2 However, the lasing wavelength became longer because of the band-gap narrowing of GaInP.

© 1992 Optical Society of America

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