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Conferences > CLEO > 1991 > CWP > CWP7
  • Conference on Lasers and Electro-Optics
  • OSA Technical Digest (Optica Publishing Group, 1991),
  • paper CWP7

Improved single quantum-well GaAs-on-Si lasers with AlGaAs/AlGaP intermediate layers by metalorganic chemical vapor deposition

Yasuhiko Hayashi, Takashi Egawa, Tetsuo Soga, Takashi Jimbo, and Masayoshi Umeno

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Abstract

Most of room temperature continuous-wave (cw) operating lasers on Si have been directly grown (two-step growth technique) by combination of molecular beam epitaxy (MBE) and metalorganic chemical vapor deposition (MOCVD) techniques. However, GaAs/Si grown by the two-step growth technique still have such problems as roughness of surface morphology and a high density of dislocations, which are obstacles to fabricating the successful quantum-well lasers on Si.

© 1991 Optical Society of America

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