Monolayer-thick GaAs-GaSbAs strained layer quantum-well lasers

J. H. Lee; T. Zhang; R. M. Kolbas

Conference on Lasers and Electro-Optics
OSA Technical Digest (Optica Publishing Group, 1991),
paper CWP6

Monolayer-thick GaAs-GaSbAs strained layer quantum-well lasers

J. H. Lee, T. Zhang, and R. M. Kolbas

Conference on Lasers and Electro-Optics 1991

Baltimore, Maryland United States
12–17 May 1991
ISBN: 1-55752-189-1

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Physics of Semiconductor Lasers (CWP)

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J. H. Lee, T. Zhang, and R. M. Kolbas, "Monolayer-thick GaAs-GaSbAs strained layer quantum-well lasers," in Conference on Lasers and Electro-Optics, J. Bufton, A. Glass, T. Hsu, and W. Krupke, eds., Vol. 10 of OSA Technical Digest (Optica Publishing Group, 1991), paper CWP6.

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Abstract

Strained layer GaSbAs-GaAs quantum wells have the potential for longer emission wavelengths than InGaAs-GaAs quantum wells even though E_g(GaSb)>E_g(InAs) and the lattice mismatch is worse. Longer wavelength (lower energy) emission is possible because of the large valence band discontinuity. In this work we report the growth and operation of strained layer GaSbAs-GaAs quantum-well lasers.

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