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Conferences > CLEO > 1991 > CTuN > CTuN2
  • Conference on Lasers and Electro-Optics
  • OSA Technical Digest (Optica Publishing Group, 1991),
  • paper CTuN2

Optically gated GaAs thyristors for pulsed power switching

J. H. Hur, P. Hadizad, H. Zhao, S. G. Hummel, P. D. Dapkus, H. R. Fetterman, C. W. Myles, and M. A. Gundersen

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Abstract

Pulsed power-switching applications require devices that are compact and jitter-free and that have high gating gain and fast current rate-of-rise for large-current pulses. Optically switched GaAs thyristors were studied to address these requirements and were found to possess desirable switching characteristics. A p-i-n base with semi-insulating GaAs was used in the structure, and the junctions were formed with metalorganic chemical vapor depositions (MOCVD).

© 1991 Optical Society of America

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