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  • Conference on Lasers and Electro-Optics
  • OSA Technical Digest (Optica Publishing Group, 1991),
  • paper CTuK1

Comparison of modulation and noise properties of strained InGaAs and unstrained GaAs single quantum-well lasers

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Abstract

Quantum-well lasers, both strained and unstrained, have been investigated extensively for their potential enhancement in modulation bandwidth due to their higher differential gain compared to bulk, active area lasers. Also, the use of strained quantum-well active areas is expected to further enhance the modulation bandwidth.1 Thus far, there have been no reports of any increase in small signal modulation bandwidth in quantum-well lasers. Measurements in single-quantum-well (SQW) lasers, strained and unstrained, have been particularly discouraging. Recently, this limitation in achievable modulation bandwidth in InGaAs/GaAs strained SQW lasers has been attributed to extremely high damping observed in these structures and the low optical confinement factor of SQW lasers.1-3

© 1991 Optical Society of America

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