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Optica Publishing Group
  • Conference on Lasers and Electro-Optics
  • OSA Technical Digest (Optica Publishing Group, 1991),
  • paper CTuF4

High-power operation of 635-nm transverse-mode stabilized AlGaInP laser diodes with current-blocking region near the facets

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Abstract

630-nm band AlGaInP laser diodes are very attractive for optical discs, printers, and as a replacement for He-Ne gas lasers. For these applications, high-power laser diodes (>20 mw) are of particular importance. However, the maximum cw light-output power of the transverse-mode stabilized, 630-nm band AlGaInP laser diodes was less than 5 mW.1-3 In this paper, we report on 20-30 mW class transverse-mode stabilized high-power AlGaInP laser diodes oscillating at 635 nm at 20 °C.

© 1991 Optical Society of America

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