Abstract
Semiconductor lasers emitting near 0.98 μm and fabricated by using In0.2Ga0.8As/GaAs quantum-well (QW) structures are of considerable interest for application as pump lasers for erbium-doped glass fiber amplifiers.1,2 The linewidth enhancement factor of these lasers has been determined from the spontaneous emission spectra below threshold. The measured linewidth enhancement is found to be about 1.0 compared to a typical value of ~5.7 observed for InGaAsP/InP double heterostructure lasers (DH) and ~3.5 for InGaAsP/InP QW lasers. The measured value is compared with the theoretical value. The line-width enhancement factor is expressed as
© 1991 Optical Society of America
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