Abstract
The inclusion of an InGaAs strained-layer quantum well (QW) into an AlGaAs heterostructure laser diode provides an easy route to the wavelength range 900 < λ < 1020 μm. One important application in this wavelength range is the optical pumping of Er-doped optical fibers at a wavelength of 980 nm. In this work data are presented detailing the high power performance of index-guided laser diodes with an InGaAs QW active region emitting at λ = 980 nm, where a maximum output power of 340 mW has been achieved. In addition, data describing the operation of strained-layer laser diodes covering the wavelength range 900 < λ < 1020 μm will be presented.
© 1991 Optical Society of America
PDF ArticleMore Like This
D. F. Welch, W. Plano, J. Major, M. Devito, and D. Scifres
WB1 Optical Fiber Communication Conference (OFC) 1991
J. S. Major, D. W. Nam, J. S. Osinski, and D. E Welch
CThE3 Conference on Lasers and Electro-Optics (CLEO:S&I) 1993
Richard F. Murison, Shuyen R. Lee, Nigel Holehouse, Alan H. Moore, Kenneth M. Dzurko, Aldo Righetti, Giorgio Grasso, Flavio Fontano, Christian F. Schaus, Shangzhu Sun, Nancy A. Dinkel, and John C. Connolly
WC5 Optical Amplifiers and Their Applications (OAA) 1991