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Optica Publishing Group
  • Conference on Lasers and Electro-Optics
  • OSA Technical Digest (Optica Publishing Group, 1991),
  • paper CTuA5

High power single-mode diodes emitting between 900 and 1020 nm

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Abstract

The inclusion of an InGaAs strained-layer quantum well (QW) into an AlGaAs heterostructure laser diode provides an easy route to the wavelength range 900 < λ < 1020 μm. One important application in this wavelength range is the optical pumping of Er-doped optical fibers at a wavelength of 980 nm. In this work data are presented detailing the high power performance of index-guided laser diodes with an InGaAs QW active region emitting at λ = 980 nm, where a maximum output power of 340 mW has been achieved. In addition, data describing the operation of strained-layer laser diodes covering the wavelength range 900 < λ < 1020 μm will be presented.

© 1991 Optical Society of America

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