Abstract

Semiconductor materials modified by organic dye thin films are being used increasingly in a variety of solid-state devices. For example, films of metal-free phthalocynine (H2Pc) were used to photosensitize SiO2 to make sensitive photo-MOS transistors.¹ In our laboratory, it is found that the copper tetrasulforatophthalocynine (CuTsPc) supramolecular films prepared by LB technique displayed photosensitizing effect on P-Si (111),² and furthermore the FET modified by the supramolecular film has been shown good photosensitive characteristics,³ in order to understand their photosensitization mechanisms, we have studied their steady surface photovoltage spectroscopy. We also used pulsed laser-induced transient surface photovoltage technique to study their interfacial charge-transfer processes of CuTsPc supramolecular film and P-Si (111) system.

© 1991 Optical Society of America