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Conferences > CLEO > 1991 > CThC > CThC4
  • Conference on Lasers and Electro-Optics
  • OSA Technical Digest (Optica Publishing Group, 1991),
  • paper CThC4

Resonantly enhanced multiphoton ionization detection of radicals generated by an ArF laser photolysis of disilane

Tatsuo Okada, Akihiro Nishimi, and Mitsuo Maeda

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Abstract

Disilane (Si2H6) is one of the most commonly used parent gases for silicon containing thin- film formation. In the laser-assisted chemical vapor deposition (laser CVD), Si2H6 is especially important because it can be decomposed with a single photon of the ArF excimer laser at 193 nm.1 However there are few direct investigations of radical production in the ArF laser photolysis of Si2H6 and radical behaviors in Si2H6 atmosphere.2,3

© 1991 Optical Society of America

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