Abstract

Recently, there is a strong interest in low-dimensional, quantum-confined structures for optical device applications. Molecular beam epitaxy and metalorganic-chemical vapor deposition (MOCVD) have been intensively used to make low-dimensional quantum-confined structures. Because of the planar nature of these growth techniques, only quantum wells can be produced directly. There are mainly two approaches to fabricate the quantum-wire structures, namely, high-resolution e-beam lithography and epitaxial growth over grooves. In the former method, e-beam lithography is followed by reactive ion etching to delineate quantum-wire structures in quantum-well samples. The damage on the surface is a severe problem. An example of the latter method is to grow superlattice on a vicinal substrate. The growth conditions must be very carefully controlled to fabricate quantum-wire structures.

© 1991 Optical Society of America