Abstract

A growing interest has recently arisen in non-linear semiconductor devices with optical access perpendicular to the substrate.^1–4 Along this direction, an original method was recently developed⁵ in order to directly measure the non-linear index variations when the medium is already embedded in a Fabry-Perot cavity and in the actual operating conditions of the device. This method relies on the shift of the reflectivity peak of the sample due to the nonlinear index change (Fig. 1). There is evidence of strong saturation behavior of the nonlinear index, which is very important for the device performances.

© 1991 Optical Society of America