Abstract
Excitation of semiconductor surfaces by pulsed laser irradiation (>10 mJ/cm2) with photons of above band gap energy has been demonstrated to cause desorption of surface atoms resulting in reconstruction1 and stoichiometry changes.2 Although the dynamics of this process has been investigated for many materials, in CdTe the phenomenon has only been studied in the high fluence regime.3 We have investigated the compositional changes accompanying KrF excimer laser irradiation of CdTe surfaces and have correlated these with the dynamics of the desorption of atoms and molecules from the surface. In addition, the analysis of the translational velocity distributions of the ejected neutral species has been used to elucidate the mechanism of the laser-surface interaction causing the desorption.
© 1990 Optical Society of America
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