Abstract
We describe our efforts in formulating a simple model to numerically calculate the experimentally observed line shapes in GaAs multiple quantum well (MQW) structures. The motivation for developing such a model is due in part to our interest in the design and construction of an x-ray detector based on measuring the nonlinear absorption changes in GaAs quantum wells due to the presence of the excess carriers created by the absorbed x-ray photon.1
© 1990 Optical Society of America
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