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  • Conference on Lasers and Electro-Optics
  • OSA Technical Digest (Optica Publishing Group, 1990),
  • paper CTUH62

Simple line shape model for GaAs multiple quantum wells

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Abstract

We describe our efforts in formulating a simple model to numerically calculate the experimentally observed line shapes in GaAs multiple quantum well (MQW) structures. The motivation for developing such a model is due in part to our interest in the design and construction of an x-ray detector based on measuring the nonlinear absorption changes in GaAs quantum wells due to the presence of the excess carriers created by the absorbed x-ray photon.1

© 1990 Optical Society of America

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