Abstract

Research on the In_xGai_1-xAs/GaAs strained-layer quantum well structure has recently attracted great attention.⁽¹⁾ Owing to the use of two semiconductor materials with large mismatching in their lattice constants and the shift of the energy gap to the infrared region, this quantum well structure has potential uses in fast response optoelectronic devices and in the long wavelength region.

© 1990 Optical Society of America