Abstract

Sensitive and low power generation of phase conjugate beams in the near IR became possible after the discovery of the photorefractive effect in GaAs and other compound semiconductor crystals.1 Although the effect is much faster when compared to their ferro-oxide counterparts (i.e., ~104 times), the small index changes possible with photorefractive semiconductors per se largely limit phase conjugation only through a conventional four-wave mixing configuration (i.e., using external counter- propagating pump beams and a probe beam).

© 1990 Optical Society of America

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