High speed InGaAs/InAlAs multiple qoantnin well optical modulators with bandwidths in excess of 40 GHz at 1.55 μm

KOICHI WAKITA; ISAMU KOTAKA; OSAMU MITOMI; HIROMITSU ASAI; YUICHI KAWAMURA; MITSURU NAGANUMA

Conference on Lasers and Electro-Optics
OSA Technical Digest (Optica Publishing Group, 1990),
paper CTUC6

High speed InGaAs/InAlAs multiple qoantnin well optical modulators with bandwidths in excess of 40 GHz at 1.55 μm

KOICHI WAKITA, ISAMU KOTAKA, OSAMU MITOMI, HIROMITSU ASAI, YUICHI KAWAMURA, and MITSURU NAGANUMA

Conference on Lasers and Electro-Optics 1990

Baltimore, Maryland United States
21–25 May 1990
ISBN: 1-55752-131-X

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Multiple Quantum Well Modulators and Switches (CTUC)

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K. WAKITA, I. KOTAKA, O. MITOMI, H. ASAI, Y. KAWAMURA, and M. NAGANUMA, "High speed InGaAs/InAlAs multiple qoantnin well optical modulators with bandwidths in excess of 40 GHz at 1.55 μm," in Conference on Lasers and Electro-Optics, T. Giallorenzi, S. Guch, Jr., A. Johnson, and R. Lind, eds., Vol. 7 of OSA Technical Digest (Optica Publishing Group, 1990), paper CTUC6.

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Abstract

For high bit rate long haul optical fiber transmission systems, there is considerable interest in external modulators that can reduce wavelength chirping. The wave- guided MQW optical modulators provide a large absorption coefficient change under a relatively low applied voltage.¹ Recently, we reported high speed MQW modulators with bandwidths in excess of 20 GHz.² A higher bandwidth—over 40 GHz—has been demonstrated with a high on/off ratio of over 20 dB and a drive voltage of 7 V utilizing the improved waveguide structure.

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