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Optica Publishing Group
  • Conference on Lasers and Electro-Optics
  • OSA Technical Digest (Optica Publishing Group, 1990),
  • paper CTHQ1

Far infrared III-V photodetectors based on InAsSb strained-layer superlattices

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Abstract

InAsSb strained-layer superlattices (SLSs) are being developed to extend the photoresponse of III-V materials into the far IR (≥ 10 µm) for future IR detector and focal plane array technologies. These type II superlattices display novel electronic and optical properties which may prove useful for nonlinear optics as well as photodetectors. (In a type II superlattice, the electron and hole potential wells are located in different layers.) Previously, we have shown that high quality InAsSb SLSs can be grown using both molecular beam epitaxy and metal-organic chemical vapor deposition.1 This paper will review the characterization of SLS optical and electronic properties and describe prototype photodiode and photoconductor structures. The photodiodes described in this work are the longest wavelength III-V photovoltaic devices ever reported, we believe.

© 1990 Optical Society of America

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