Abstract
Low threshold current quantum well (QW) lasers are needed for their expected role in future optoelectronic integrated circuit applications such as optical computing. The much studied GaAs/AlGaAs system has traditionally provided the most likely candidate for this purpose due to consistent achievement of low threshold currents.1-3 Numerous gain and threshold current models in the past have been used to calculate the various effects of cavity length, mirror reflectivity, number of QWs, and other design parameters on broad area threshold current alone (Refs. 4 and 5 and references therein).
© 1990 Optical Society of America
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