Abstract
The ability to modify the optical properties of semiconductor quantum wells (QWs) due to the addition or removal of free carriers is of tremendous fundamental as well as technological importance.1 Tunable populations of electron-hole pairs are conveniently introduced by means of optical excitation. This has enabled extensive studies of many body effects on the optical properties of semiconductors.1 Generation of electron-hole pairs, however, does not allow distinguishing the influence of electrons or holes, respectively.
© 1990 Optical Society of America
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