Abstract
The short pulse saturation behavior of semiconductor amplifiers has been the subject of several recent studies.1-3 To date, no data have been reported that show a pulse width dependence of the saturation energy. We present experiments on an InGaAsP multiple quantum well (MQW) amplifier that clearly show such a dependence. We compare our experimental results to theoretical predictions of a simple model that takes into account ultrafast carrier dynamics in the amplifier.
© 1990 Optical Society of America
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