Two-photon absorption and free-carrier absorption in semiconductor-doped glasses

E. CANTO; E. MIESAK; D. J. HAGAN; M. J. SOILEAU; E. W. VAN STRYLAND

Conference on Lasers and Electro-Optics
OSA Technical Digest (Optica Publishing Group, 1988),
paper WM41

Two-photon absorption and free-carrier absorption in semiconductor-doped glasses

E. CANTO, E. MIESAK, D. J. HAGAN, M. J. SOILEAU, and E. W. VAN STRYLAND

Conference on Lasers and Electro-Optics 1988

Anaheim, California United States
25–29 April 1988
ISBN: 1-55752-033-X

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Poster Session: 2 (WM)

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E. CANTO, E. MIESAK, D. J. HAGAN, M. J. SOILEAU, and E. W. VAN STRYLAND, "Two-photon absorption and free-carrier absorption in semiconductor-doped glasses," in Conference on Lasers and Electro-Optics, D. Pinnow and P. Moulton, eds., Vol. 7 of OSA Technical Digest (Optica Publishing Group, 1988), paper WM41.

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Abstract

Several nonlinear optical properties of semiconductor-doped glasses have been studied. In particular, the nonlinearities associated with the saturation of interband absorption and of exciton absorption have been extensively investigated.¹

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