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Optica Publishing Group
  • Conference on Lasers and Electro-Optics
  • OSA Technical Digest (Optica Publishing Group, 1988),
  • paper WB3

Diffraction-limited high-power operation from interferometric phase-locked arrays of index-guided AIGaAs/GaAs diode lasers

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Abstract

Phase-locked arrays of index-guided diode lasers (≥8 elements) are of interest as sources of high powers in stable diffraction-limited beams. Some evanescently coupled arrays1,2 have demonstrated single diffraction-limited beam operation close to lasing threshold. However, for drive levels exceeding (1.5-1.7) X threshold the beam invariably broadens due to gain spatial hole burning so that at (3-4) times threshold the beams are 2.5-4 times the diffraction limit, making them of little use for systems employing beam-forming optics. For evanescently coupled arrays (≥8 elements) the highest reported powers in nearly diffraction- limited beams are 60-70 mW.1,2

© 1988 Optical Society of America

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