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Conferences > CLEO > 1988 > THM > THM6
  • Conference on Lasers and Electro-Optics
  • OSA Technical Digest (Optica Publishing Group, 1988),
  • paper THM6

Testing of GaAs devices using optical phase modulation

GREGORY N. KOSKOWICH and MANI SOMA

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Abstract

The poor performance of mechanical probes at high frequencies has led to the development of optical probing techniques for GaAs circuits using the polarization change induced by the linear electrooptic effect (LEO) in the substrate.1 Recently a probing technique for Si devices has been developed which uses optical phase modulation and interferometric detection,2 and its application to GaAs devices promises improved sensitivity compared to systems utilizing LEO exclusively.

© 1988 Optical Society of America

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