Abstract
InSb has served as an important midwave (λ = 3–5-μm) IR detector material for several decades. Until recently, the only detector quality material available was LEC grown bulk form; the minority carrier lifetimes in this LEC material restricted detector use to operating temperatures ranging from 70 to 90 K to ensure adequate performance. LPE grown InSb epilayers have minority carrier lifetimes up to 2 orders of magnitude greater than those found in the best available bulk and permit system designers to trade off potential higher performance with elevated operating temperatures.
© 1988 Optical Society of America
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