Abstract

The in situ real-time detection of reactive intermediate species present during chemical vapor deposition (CVD) processes provides the basis for studies of the chemical dynamics of these processes and a useful diagnostic tool not only in optimizing current CVD techniques but also in designing new ones. The radical SiH2 is an important gas-phase precursor in the CVD of silicon films produced by the dissociation of silane and organosilanes. It has been shown that absorption by SiH2 can be detected by intracavity laser spectroscopy (ILS) with sufficient sensitivity to permit the direct in situ monitoring of SiH2 in conditions appropriate for the CVD of silicon films.1

© 1987 Optical Society of America

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