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Conferences > CLEO > 1986 > WP > WP5

GaAs/AIGaAs distributed-feedback transverse junction stripe laser grown by molecular beam epitaxy

K. Mitsunaga, S. Noda, K. Kojima, K. Kyuma, and T. Nakayama

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Abstract

Among the various types of laser-diode the transverse junction stripe (TJS) laser1 on a semi-insulating GaAs substrate is attractive for integrated optoelectronic circuits (IOECs) as well as for other practical applications because of its low-threshold current and high-speed operation. The distributed-feedback (DFB) structure laser2 offers many stable and pure spectral characteristics compared with conventional F.P. lasers. Moreover, the lack of need for cleaved mirror facets gives design flexibility when the laser is integrated in IOECs.

© 1986 Optical Society of America

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