Abstract
Multiple quantum well structures (MQWS) of GaAs have been shown to exhibit very large optical nonlinearities when irradiated with light corresponding to the absorption region. Their physical origin is a bleaching of exciton absorption lines induced by photogenerated free carriers. These nonlinearities have been exploited to fabricate all-optical NOR gates with on-switching times of one picosecond1). However the switch-off time was markedly slower, in the nanosecond range, being limited by the recombination rate of the free carriers responsible for exciton screening.
© 1986 Optical Society of America
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